Semiconductor device
US9070701B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2013 |
| Grant date | Jun 30, 2015 |
| Priority date | — |
| Expiry date | Mar 31, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
Abstract
A semiconductor device is provided. The semiconductor device includes first and second storage electrodes formed to be spaced apart from each other on a substrate, an insulating continuous support pattern connected to top surfaces of the first and second storage electrodes, a storage dielectric layer formed to cover the first and second storage electrodes and the continuous support pattern, and a plate electrode formed on the storage dielectric layer. The continuous support pattern includes a first contact part connected to the top surface of the first storage electrode, a second contact part connected to the top surface of the second storage electrode, and a connection part connecting the first and second contact parts with each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.