Shallow trench isolation structure, manufacturing method thereof and a device based on the structure
US9070744B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 3, 2011 |
| Grant date | Jun 30, 2015 |
| Priority date | — |
| Expiry date | May 11, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76232
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a shallow trench isolation structure, manufacturing method thereof and a device based on the structure. The present invention provides a method for manufacturing a shallow trench isolation (STI) structure, characterized in comprising the following steps: providing a semiconductor substrate; forming an insulating medium on said semiconductor substrate; etching a part of the insulating medium by using a mask to expose the semiconductor substrate thereunder, the unetched insulating medium forming STI regions; and epitaxially growing a semiconductor layer on said semiconductor substrate between said STI regions as an active region. With the method provided by the present invention, the problem of filling a small-size trench is solved and the problem of STI step height is overcome.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.