Semiconductor device with low on resistance and high breakdown voltage
US9070765B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 6, 2013 |
| Grant date | Jun 30, 2015 |
| Priority date | — |
| Expiry date | Feb 6, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes an epitaxial layer of semiconductor material of a first conductivity type, a body region of a second (opposite) conductivity type extending into the epitaxial layer from a main surface of the epitaxial layer, a source region of the first conductivity type disposed in the body region, and a channel region extending laterally in the body region from the source region along the main surface. A charge compensation region of the second conductivity type can be provided under the body region which extends in a direction parallel to the main surface and terminates prior to a pn-junction between the source and body regions at the main surface, and/or an additional region of the first conductivity type which has at least one peak doping concentration each of which occurs deeper in the epitaxial layer from the main surface than a peak doping concentration of the device channel region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.