Image sensor and fabricating method of image sensor
US9070802B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 12, 2014 |
| Grant date | Jun 30, 2015 |
| Priority date | — |
| Expiry date | Mar 12, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F71/00
Abstract
The present invention provides an image sensor and a fabricating method of the image sensor. The image sensor comprises: a first type epitaxial layer, a photodiode region, a first type well region, a gate region of a source follower transistor, and a first type implant isolation region. The first type well region is formed within the first type epitaxial layer with a first horizontal distance to the photodiode region and a vertical distance to a surface of the first type epitaxial layer. The gate region of a source follower transistor is formed on the surface of the first type epitaxial layer and above the first type well region, and has a second horizontal distance to the photodiode region. There is a distance between the first type implant isolation region and the first type well region as an anti-blooming path.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.