Memory elements and methods with improved data retention and/or endurance
US9070877B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Aug 21, 2013 |
| Grant date | Jun 30, 2015 |
| Priority date | — |
| Expiry date | Oct 21, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C13/0011
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method can include forming at least one memory layer over a first electrode, the memory layer having at least one element formed therein that oxidizes in the presence of an electric field to form conductive paths within the memory layer; and forming an inhibiting layer within the memory layer that increases an oxidation energy for the at least one element, as compared to the oxidation energy for the at least one element in the memory layer without the inhibiting layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.