Pinched center resistive change memory cell
US9070878B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 21, 2014 |
| Grant date | Jun 30, 2015 |
| Priority date | — |
| Expiry date | May 21, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
Abstract
The present invention is a method for forming a vertically oriented element having a narrower area near its center away from either end. The present invention will find applicability in other memory cell structures. The element will have a narrow portion towards its center such that current density will be higher away from the ends of the element. In this way, the heating will occur away from the ends of the storage element. Heating in a phase-change or resistive change element leads to end of life conditions, including the condition whereby contaminants from the end point contacts are enabled to migrate away from the end point and into the storage element thereby contaminating the storage element material and reducing its ability to be programmed, erased and/or read back. By keeping the greatest heating towards the center of the element where it is surrounded by more of the same material and away from the ends of the element where end point contact material can be heated and potentially activated, the lifetime of the element will be increased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.