CMP method for metal-containing substrates
US9074118B2 · kind B2 · utility
1Cited by
3References
20Claims
0Family size
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Key dates
| Filing date | Jul 6, 2007 |
| Grant date | Jul 7, 2015 |
| Priority date | — |
| Expiry date | Feb 26, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
An aqueous chemical-mechanical polishing composition for polishing metal containing substrates comprising an abrasive particle consisting essentially of a primary particle modified with an aluminosilicate layer, and wherein the abrasive particle has a zeta potential measured at pH 2.3 of about −5 mV to about −100 mV. The composition can be used to polish the surface of a tungsten containing substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.