Method and structure of an integrated MEMS inertial sensor device using electrostatic quadrature-cancellation
US9075079B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 5, 2014 |
| Grant date | Jul 7, 2015 |
| Priority date | — |
| Expiry date | Jun 5, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01P2015/0865
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An integrated MEMS inertial sensor device. The device includes a MEMS inertial sensor overlying a CMOS substrate. The MEMS inertial sensor includes a drive frame coupled to the surface region via at least one drive spring, a sense mass coupled to the drive frame via at least a sense spring, and a sense electrode disposed underlying the sense mass. The device also includes at least one pair of quadrature cancellation electrodes disposed within a vicinity of the sense electrode, wherein each pair includes an N-electrode and a P-electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.