Patent · US Active

Method and structure of an integrated MEMS inertial sensor device using electrostatic quadrature-cancellation

US9075079B2 · kind B2 · utility

5Cited by
0References
20Claims
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Key dates

Filing dateJun 5, 2014
Grant dateJul 7, 2015
Priority date
Expiry dateJun 5, 2034

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01P2015/0865
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

An integrated MEMS inertial sensor device. The device includes a MEMS inertial sensor overlying a CMOS substrate. The MEMS inertial sensor includes a drive frame coupled to the surface region via at least one drive spring, a sense mass coupled to the drive frame via at least a sense spring, and a sense electrode disposed underlying the sense mass. The device also includes at least one pair of quadrature cancellation electrodes disposed within a vicinity of the sense electrode, wherein each pair includes an N-electrode and a P-electrode.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.