Chemically amplified negative resist composition and patterning process
US9075306B2 · kind B2 · utility
9Cited by
2References
8Claims
0Family size
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Key dates
| Filing date | Mar 29, 2011 |
| Grant date | Jul 7, 2015 |
| Priority date | — |
| Expiry date | Mar 29, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/20
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A chemically amplified negative resist composition comprises a polymer comprising recurring hydroxystyrene units and recurring styrene units having electron withdrawing groups substituted thereon. In forming a pattern having a fine feature size of less than 0.1 μm, the composition exhibits a high resolution in that a resist coating formed from the composition can be processed into such a fine size pattern while the formation of bridges between pattern features is minimized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.