Method and system for providing a magnetic tunneling junction using spin-orbit interaction based switching and memories utilizing the magnetic tunneling junction
US9076537B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 26, 2012 |
| Grant date | Jul 7, 2015 |
| Priority date | — |
| Expiry date | Apr 27, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic memory is described. The magnetic memory includes magnetic junctions and at least one spin-orbit interaction (SO) active layer. Each of the magnetic junctions includes a data storage layer that is magnetic. The SO active layer(s) are adjacent to the data storage layer of the magnetic junction. The at SO active layer(s) are configured to exert a SO torque on the data storage layer due to a current passing through the at least one SO active layer in a direction substantially perpendicular to a direction between the at least one SO active layer and the data storage layer of a magnetic junction of the plurality of magnetic junctions closest to the at least one SO active layer. The data storage layer is configured to be switchable using at least the SO torque.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.