Patent · US Active

Symmetrical differential sensing method and system for STT MRAM

US9076540B2 · kind B2 · utility

3Cited by

3References

8Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

David Mueller · Blankenloch, DE
Wolf Allers · Munich, DE
Mihail Jefremow · Augsburg, DE

Key dates

Filing date	Aug 23, 2012
Grant date	Jul 7, 2015
Priority date	—
Expiry date	Oct 5, 2033

Classification

Technology area (CPC G)Physics
CPC primaryG11C2029/5006
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

The invention relates to methods and systems for reading a memory cell and in particular, an STT MRAM. In one example, a system for reading a memory cell includes a sense path and an inverse path. A reference current is provided through the sense path and is sampled via a first sampling element in the sense path, and a cell current from the memory cell is provided through the inverse sense path and is sampled via a second sampling element in the inverse sense path. Subsequently, the memory cell is disconnected from the inverse sense path, the cell current is provided through the sense path, the reference source is disconnected from the sense path, and the reference current is provided through the inverse sense path. The output levels are then determined by the cell and reference currents working against the sampled reference and sampled cell currents.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.