Semiconductor process for modifying shape of recess
US9076652B2 · kind B2 · utility
1Cited by
78References
19Claims
0Family size
Assignee
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Key dates
| Filing date | May 27, 2013 |
| Grant date | Jul 7, 2015 |
| Priority date | — |
| Expiry date | Jun 21, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/832
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor process includes the following steps. Two gates are formed on a substrate. A recess is formed in the substrate beside the gates. A surface modification process is performed on a surface of the recess to modify the shape of the recess and change the contents of the surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.