Non-volatile memory device and method for manufacturing same
US9076723B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 9, 2014 |
| Grant date | Jul 7, 2015 |
| Priority date | — |
| Expiry date | Jun 9, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/71
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile memory device includes: a first interconnection extending in a first direction; a second interconnection extending in a second direction, and a lower end of the second interconnection being located above the first interconnection; a plurality of third interconnections extending in a third direction, and the third interconnections being arranged in the second direction; a current limitation layer provided between the second interconnection and the third interconnections; a metal ion source layer provided between the current limitation layer and the third interconnections; a resistance change layer provided between the current limitation layer and the third interconnections; and a selector provided between the first interconnection and the lower end of the second interconnection.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.