Contact structure of semiconductor device
US9076762B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 29, 2013 |
| Grant date | Jul 7, 2015 |
| Priority date | — |
| Expiry date | Nov 29, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D10/891
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The embodiments described above provide mechanisms of forming contact structures with low resistance. A strained material stack with multiple sub-layers is used to lower the Schottky barrier height (SBH) of the conductive layers underneath the contact structures. The strained material stack includes a SiGe main layer, a graded SiG layer, a GeB layer, a Ge layer, and a SiGe top layer. The GeB layer moves the Schottky barrier to an interface between GeB and a metal germanide, which greatly reduces the Schottky barrier height (SBH). The lower SBH, the Ge in the SiGe top layer forms metal germanide and high B concentration in the GeB layer help to reduce the resistance of the conductive layers underneath the contact structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.