Patent · US Active

Wire bondable surface for microelectronic devices

US9076773B2 · kind B2 · utility

1Cited by

1References

2Claims

0Family size

Assignee

Atotech Deutschland GmbH & Co. KG · DE

Inventors

Albrecht Uhlig · Berlin, DE
Josef Gaida · Berlin, DE
Christof Suchentrunk · Berlin, DE

Key dates

Filing date	May 9, 2012
Grant date	Jul 7, 2015
Priority date	—
Expiry date	May 9, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/10253
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The present invention concerns thin diffusion barriers in metal and metal alloy layer sequences of contact area/barrier layer/first bonding layer type for metal wire bonding applications. The diffusion barrier is selected from Co-M-P. Co-M-B and Co-M-B—P alloys wherein M is selected from Mn, Zr, Re, Mo, Ta and W having a thickness in the range 0.03 to 0.3 μm. The first bonding layer is selected from palladium and palladium alloys.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.