Fabrication of nickel free silicide for semiconductor contact metallization
US9076787B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 10, 2014 |
| Grant date | Jul 7, 2015 |
| Priority date | — |
| Expiry date | Nov 10, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device with an n-type transistor and a p-type transistor having an active region is provided. The active region further includes two adjacent gate structures. A portion of a dielectric layer between the two adjacent gate structures is selectively removed to form a contact opening having a bottom and sidewalls over the active region. A bilayer liner is selectively provided within the contact opening in the n-type transistor and a monolayer liner is provided within the contact opening in the p-type transistor. The contact opening in the n-type transistor and p-type transistor is filled with contact material. The monolayer liner is treated to form a silicide lacking nickel in the p-type transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.