Semiconductor device having a high frequency external connection electrode positioned within a via hole
US9076789B2 · kind B2 · utility
6Cited by
45References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 6, 2014 |
| Grant date | Jul 7, 2015 |
| Priority date | — |
| Expiry date | Jan 6, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is disclosed that includes a support substrate, a first semiconductor element that is mounted on one side of the support substrate, a second semiconductor element including a high frequency electrode that is mounted on the one side of the support substrate, a via hole that is provided at the support substrate in relation to the high frequency electrode, and an external connection electrode that is provided on the other side of the support substrate in relation to the via hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.