FinFET device and method
US9076869B1 · kind B1 · utility
17Cited by
0References
20Claims
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Assignee
Inventors
Key dates
| Filing date | Jan 8, 2014 |
| Grant date | Jul 7, 2015 |
| Priority date | — |
| Expiry date | Jan 8, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/834
Abstract
A fin field effect transistor (FinFET), and a method of fabrication, is introduced. In an embodiment, trenches are formed in a substrate, wherein a region between adjacent trenches defines a fin. A dielectric material is formed in the trenches. A part of the substrate is doped and a region of high dopant concentration and a region of low dopant concentration are formed. Gate stacks are formed, portions of the fins are removed and source/drain regions are epitaxially grown in the regions of high/low dopant concentration. Contacts are formed to provide electrical contacts to source/gate/drain regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.