Forming high-efficiency silicon solar cells using density-graded anti-reflection surfaces
US9076903B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 8, 2014 |
| Grant date | Jul 7, 2015 |
| Priority date | — |
| Expiry date | Jan 8, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A method (50) is provided for processing a graded-density AR silicon surface (14) to provide effective surface passivation. The method (50) includes positioning a substrate or wafer (12) with a silicon surface (14) in a reaction or processing chamber (42). The silicon surface (14) has been processed (52) to be an AR surface with a density gradient or region of black silicon. The method (50) continues with heating (54) the chamber (42) to a high temperature for both doping and surface passivation. The method (50) includes forming (58), with a dopant-containing precursor in contact with the silicon surface (14) of the substrate (12), an emitter junction (16) proximate to the silicon surface (14) by doping the substrate (12). The method (50) further includes, while the chamber is maintained at the high or raised temperature, forming (62) a passivation layer (19) on the graded-density silicon anti-reflection surface (14).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.