Method and system for providing magnetic memories switchable using spin accumulation and selectable using magnetoelectric devices
US9076954B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 5, 2013 |
| Grant date | Jul 7, 2015 |
| Priority date | — |
| Expiry date | Dec 5, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic memory is described. In one aspect, the magnetic memory includes magnetic junctions and at least one semi-spin valve (SSV) line adjacent to the magnetic junctions. Each magnetic junction includes a magnetic free layer. The SSV line(s) include a ferromagnetic layer and a nonmagnetic layer between the ferromagnetic layer and the magnetic junctions. The SSV line(s) are configured to exert a spin accumulation induced torque on at least a portion of the magnetic junctions due to an accumulation of spin polarized current carriers from a current that is substantially in-plane. The free layer is configured to be written using at least the spin accumulation induced torque. In another aspect, the magnetic memory includes magnetic memory cells and at least one spin torque (ST) line that is analogous to the SSV line. Each magnetic memory cell includes magnetic junction(s) analogous to those above and magnetoelectric selection device(s).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.