Microelectromechanical sensor with non-conductive sensing mass, and method of sensing through a microelectromechanical sensor
US9080871B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 12, 2012 |
| Grant date | Jul 14, 2015 |
| Priority date | — |
| Expiry date | Aug 1, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01P15/125
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A microelectromechanical sensor includes: a supporting structure, having at least one first electrode and one second electrode, which form a capacitor; and a sensing mass made of non-conductive material, which is arranged so as to interact with an electric field associated to the capacitor and is movable with respect to the supporting structure according to a degree of freedom so that a relative position of the sensing mass with respect to the first electrode and to the second electrode is variable in response to external stresses. The sensing mass is made of a material selected in the group consisting of: intrinsic semiconductor materials, oxides of semiconductor materials, and nitrides of semiconductor materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.