Backside CMOS compatible BioFET with no plasma induced damage
US9080969B2 · kind B2 · utility
33Cited by
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20Claims
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Key dates
| Filing date | May 19, 2014 |
| Grant date | Jul 14, 2015 |
| Priority date | — |
| Expiry date | May 19, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present disclosure provides a bio-field effect transistor (BioFET) device and methods of fabricating a BioFET and a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a gate structure disposed on a first surface of a substrate and an interface layer formed on a second surface of the substrate. The substrate is thinned from the second surface to expose a channel region before forming the interface layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.