Photoresist having improved extreme-ultraviolet lithography imaging performance
US9081280B2 · kind B2 · utility
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11References
19Claims
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Key dates
| Filing date | Feb 24, 2011 |
| Grant date | Jul 14, 2015 |
| Priority date | — |
| Expiry date | Jan 6, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/20
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Provided is a photoresist that includes a polymer is free of a aromatic group and a photo acid generator (PAG) that has less than three aromatic groups. In an embodiment, the PAG includes an anion component and a cation component. The anion component has one of the following chemical formulas:R31C—CR21—CR21—CR21—SO3R31C—CR21—CR21—SO3R31C—CR21—SO3R31C—SO3The cation component has one of the following chemical formulas:Wherein R1 and R2 each represent a chemical compound.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.