Restoring ECC syndrome in non-volatile memory devices
US9081710B2 · kind B2 · utility
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Key dates
| Filing date | Apr 11, 2013 |
| Grant date | Jul 14, 2015 |
| Priority date | — |
| Expiry date | Sep 7, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C29/52
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of restoring an ECC syndrome in a non-volatile memory device having memory cells arranged in a plurality of sectors within a memory cell array, the method comprising identifying a first sector including at least one page having a disabled ECC (error correction code) flag; reading the value of all data bits in said at least one page; calculating values for ECC bits in said at least one page; and writing said data bit values and said calculated ECC bit values to a second sector in the memory cell array.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.