Magnetic memory using spin orbit interaction
US9082497B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 14, 2011 |
| Grant date | Jul 14, 2015 |
| Priority date | — |
| Expiry date | Oct 18, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic memory includes: a base layer; a magnetization free layer; a barrier layer; and a magnetization reference layer. The magnetization free layer, with which the base layer is covered, has invertible magnetization and is magnetized approximately uniformly. The barrier layer, with which the magnetization free layer is covered, is composed of material different from material of the base layer. The magnetization reference layer is arranged on the barrier layer and has a fixed magnetization. When the magnetization of the magnetization free layer is inverted, a first writing current is made to flow from one end to the other end of the magnetization free layer in an in-plane direction without through the magnetization reference layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.