Memristive element based on hetero-junction oxide
US9082533B2 · kind B2 · utility
6Cited by
2References
22Claims
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Key dates
| Filing date | Oct 21, 2011 |
| Grant date | Jul 14, 2015 |
| Priority date | — |
| Expiry date | Oct 21, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/71
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Memristive elements are provided that include an active region disposed between a first electrode and a second electrode. The active region includes an switching layer of a first metal oxide and a conductive layer of a second metal oxide, where a metal on of the first metal oxide differs from a metal ion of the second metal oxide. The memristive element exhibits a nonlinear current-voltage characteristic in the low resistance state based on the oxide hetero-junction between the first metal oxide and the second metal oxide. Multilayer structures that include the memristive elements also are provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.