Magnetic element having perpendicular anisotropy with enhanced efficiency
US9082534B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2013 |
| Grant date | Jul 14, 2015 |
| Priority date | — |
| Expiry date | May 30, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/115
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A material composition for forming a free layer in a STT structure (such as a single or dual MTJ structure) can include CoxFeyMz, where M is a non-magnetic material that assists in forming a good crystalline orientation and matching between the free layer and an MgO interface. The material M preferably either does not segregate to the MgO interface or, if it does segregate to the MgO interface, it does not significantly reduce the PMA of the free layer. The free layer can further include a connecting layer, where M is attracted to the insertion layer during annealing. The free layer can include a graded composition of CoxFeyMz, where z changes within the free layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.