Methods of forming a layer
US9082611B2 · kind B2 · utility
3Cited by
5References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 25, 2014 |
| Grant date | Jul 14, 2015 |
| Priority date | — |
| Expiry date | Feb 25, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to example embodiments, a method of forming a layer includes: forming a dielectric layer using a metal precursor expressed by one of R3yM(NR1R2)x-y and M(OR1R2) and using a silicon precursor expressed by HzSi(NR4R5)4-z. Each of “R1”, “R2”, “R3”, “R4”, and “R5” are hydrogen or hydrocarbon; “R3” is different than “R1” and “R2”; “x” is in the range of 3 to 5; “y” is in the range of 1 to 4; “z” is in the range of 2 to 3; and “M” is a metal. The dielectric layer is a metal silicate layer or a metal nitride layer doped with silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.