Semiconductor devices
US9082647B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 22, 2014 |
| Grant date | Jul 14, 2015 |
| Priority date | — |
| Expiry date | Aug 22, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/80
Abstract
There is provided a semiconductor device. The semiconductor device may include multiple contacts plugs, an insulation layer pattern, a metal oxide layer pattern, a metal pattern and a metal line. The contact plugs contact a substrate. The insulation layer pattern is formed between the contact plugs and has a top surface lower than those of the contact plugs. The metal oxide layer pattern is formed on the insulation layer pattern, and has a dielectric constant higher than that of silicon oxide. The metal pattern is formed on the metal oxide layer pattern and contacts sidewalls of the contact plugs. The metal line contacts top surfaces of the contact plugs and the metal pattern and extends thereon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.