Method for producing a semiconductor device and semiconductor device
US9082838B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 25, 2013 |
| Grant date | Jul 14, 2015 |
| Priority date | — |
| Expiry date | Nov 2, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/666
Abstract
In a first step, a planar silicon layer is formed on a silicon substrate and first and second pillar-shaped silicon layers are formed on the planar silicon layer; a second step includes forming an oxide film hard mask on the first and second pillar-shaped silicon layers, and forming a second oxide film on the planar silicon layer, the second oxide film being thicker than a gate insulating film; and a third step includes forming the gate insulating film around each of the first pillar-shaped silicon layer and the second pillar-shaped silicon layer, forming a metal film and a polysilicon film around the gate insulating film, the polysilicon film having a thickness that is smaller than one half a distance between the first pillar-shaped silicon layer and the second pillar-shaped silicon layer, forming a third resist for forming a gate line, and performing anisotropic etching to form the gate line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.