Semiconductor device having metal layer over drift region
US9082841B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 4, 2014 |
| Grant date | Jul 14, 2015 |
| Priority date | — |
| Expiry date | Jun 4, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/111
Abstract
A semiconductor device includes a substrate, an insulation layer disposed over the substrate, covering a drift region, and including a first edge and a second edge opposite to the first edge, a gate layer covering the first edge of the insulation layer, and a metal layer including a metal portion connected to the gate layer and overlapping the first edge of the insulation layer. The metal portion includes a first edge located closer to a central portion of the insulation layer than an opposite second edge of the metal portion. A distance from the first edge of the metal portion to the first edge of the insulation layer along a channel length direction is a. A distance from the first edge of the insulation layer to the second edge of the insulation layer is L. A ratio of a/L is equal to or higher than 0.46.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.