FinFET having suppressed leakage current

US9082851B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Ravikumar Ramachandran · Beacon, US
• Henry K. Utomo · Ridgefield, US
• Reinaldo Vega · Mahopac, US

Key dates

• Filing date: Nov 22, 2013
• Grant date: Jul 14, 2015
• Expiry date: Nov 23, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/017

Abstract

A FinFET device which includes: a semiconductor substrate; a three dimensional fin oriented perpendicularly to the semiconductor substrate; a local trench isolation between the three dimensional fin and an adjacent three dimensional fin; a nitride layer on the local trench isolation; a gate stack wrapped around a central portion of the three dimensional fin and extending through the nitride layer; sidewall spacers adjacent to the gate stack and indirectly in contact with the nitride layer, two ends of the three dimensional fin extending from the sidewall spacers, a first end being for the source of the FET device and a second end being for a drain of the FET device; and an epitaxial layer covering each end of the three dimensional fin and being on the nitride layer. Also disclosed is a method of fabricating a FinFET device.