Patent · US Active

Catalytic growth of Josephson junction tunnel barrier

US9082927B1 · kind B1 · utility

3Cited by
4References
16Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 20, 2013
Grant dateJul 14, 2015
Priority date—
Expiry dateJan 16, 2034

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10N60/12
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

A tunnel barrier layer in a superconducting device, such as a Josephson junction, is made from catalytically grown silicon dioxide at a low temperature (<100 C, e.g., 20-30 C) that does not facilitate oxidation or silicide formation at the superconducting electrode interface. The tunnel barrier begins as a silicon layer deposited on a superconducting electrode and covered by a thin, oxygen-permeable catalytic layer. Oxygen gas is dissociated on contact with the catalytic layer, and the resulting oxygen atoms pass through the catalytic layer to oxidize the underlying silicon. The reaction self-limits when all the silicon is converted to silicon dioxide.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.