Semiconductor optoelectronic structure with increased light extraction efficiency
US9082934B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 26, 2013 |
| Grant date | Jul 14, 2015 |
| Priority date | — |
| Expiry date | Sep 26, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/01335
Abstract
A semiconductor optoelectronic structure with increased light extraction efficiency, includes a substrate; a buffer layer is formed on the substrate and includes a pattern having plural grooves formed adjacent to the substrate; a semiconductor layer is formed on the buffer layer and includes an n-type conductive layer formed on the buffer layer, an active layer formed on the n-type conductive layer, and a p-type conductive layer formed on the active layer; a transparent electrically conductive layer is formed on the semiconductor layer; a p-type electrode is formed on the transparent electrically conductive layer; and an n-type electrode is formed on the n-type conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.