Atomic layer deposition encapsulation for acoustic wave devices
US9082953B2 · kind B2 · utility
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17References
10Claims
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Key dates
| Filing date | Apr 16, 2013 |
| Grant date | Jul 14, 2015 |
| Priority date | — |
| Expiry date | Aug 14, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/02929
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Acoustic wave devices and methods of coating a protective film of alumina (Al2O3) on the acoustic wave devices are disclosed herein. The protective film is applied through an atomic layer deposition (ALD) process. The ALD process can deposit very thin layers of alumina on the surface of the acoustic wave devices in a precisely controlled manner. Thus, the uniform film does not significantly distort the operation of the acoustic wave device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.