Method of forming a tantalum-containing layer on a substrate
US9085823B2 · kind B2 · utility
2Cited by
8References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 15, 2009 |
| Grant date | Jul 21, 2015 |
| Priority date | — |
| Expiry date | Jul 15, 2029 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/18
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for forming a tantalum-containing layer on a substrate, the method comprising at least the steps of: wherein:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.