Ziyun Wang
40Patents
12h-index
56Co-inventors
84Inventor score
Filing activity: Mar 13, 2000 → Nov 1, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7531679B2 | Composition and method for low temperature deposition of silicon-containing films such as films including silicon nitride, silicon dioxide and/or silicon-oxynitride | Electricity | 33 | Expired |
| US7713346B2 | Composition and method for low temperature deposition of silicon-containing films | Electricity | 19 | Active |
| US7786320B2 | Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride | Electricity | 18 | Active |
| US7446217B2 | Composition and method for low temperature deposition of silicon-containing films | Electricity | 17 | Expired |
| US8853075B2 | Method for forming a titanium-containing layer on a substrate using an atomic layer deposition (ALD) process | Electricity | 14 | Active |
| US6623656B2 | Source reagent composition for CVD formation of Zr/Hf doped gate dielectric and high dielectric constant metal oxide thin films and method of using same | Chemistry; Metallurgy | 14 | Expired |
| US6417369B1 | Pyrazolate copper complexes, and MOCVD of copper using same | Chemistry; Metallurgy | 13 | Expired |
| US7887883B2 | Composition and method for low temperature deposition of silicon-containing films | Electricity | 13 | Active |
| US6440202B1 | Pyrazolate copper complexes, and MOCVD of copper using same | Chemistry; Metallurgy | 13 | Expired |
| US8236097B2 | Composition and method for low temperature deposition of silicon-containing films | Electricity | 13 | Active |
| US7579496B2 | Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same | Chemistry; Metallurgy | 12 | Expired |
| US7910765B2 | Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride | Electricity | 12 | Active |
| US7863203B2 | Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same | Chemistry; Metallurgy | 11 | Active |
| US7108771B2 | Method for removal of impurities in cyclic siloxanes useful as precursors for low dielectric constant thin films | Performing Operations; Transporting | 11 | Expired |
| US7601860B2 | Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films | Electricity | 10 | Expired |
| US6639080B2 | Pyrazolate copper complexes, and MOCVD of copper using same | Chemistry; Metallurgy | 10 | Expired |
| US7084080B2 | Silicon source reagent compositions, and method of making and using same for microelectronic device structure | Electricity | 9 | Expired |
| US8802882B2 | Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films | Electricity | 9 | Active |
| US7781605B2 | Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films | Electricity | 9 | Active |
| US6767830B2 | Br2SbCH3 a solid source ion implant and CVD precursor | Electricity | 6 | Expired |
| US8242032B2 | Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same | Chemistry; Metallurgy | 5 | Active |
| US9102693B2 | Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films | Electricity | 5 | Active |
| US9085823B2 | Method of forming a tantalum-containing layer on a substrate | Chemistry; Metallurgy | 2 | Active |
| US11002802B2 | Fault detection method for buck converter based on inverse kalman filter | Electricity | 2 | Active |
| US8153833B2 | Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride | Electricity | 2 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.