Spin torque MRAM having perpendicular magnetization with oxide interface
US9087543B2 · kind B2 · utility
4Cited by
6References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 6, 2013 |
| Grant date | Jul 21, 2015 |
| Priority date | — |
| Expiry date | Sep 18, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3286
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A mechanism is provided for a structure with perpendicular magnetic anisotropy. A bottom oxide layer is disposed, and a magnetic layer is disposed adjacent to the bottom oxide layer. The magnetic layer includes iron and is magnetized perpendicularly to a plane of the magnetic layer. A top oxide layer is disposed adjacent to the magnetic layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.