Method for manufacturing graphene nano-ribbon, mosfet and method for manufacturing the same
US9087691B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 18, 2011 |
| Grant date | Jul 21, 2015 |
| Priority date | — |
| Expiry date | Mar 4, 2033 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y40/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A MOSFET with a graphene nano-ribbon, and a method for manufacturing the same are provided. The MOSFET comprises an insulating substrate; and an oxide protection layer on the insulating substrate. At least one graphene nano-ribbon is embedded in the oxide protection layer and has a surface which is exposed at a side surface of the oxide protection layer. A channel region is provided in each of the at least one graphene nano-ribbon. A source region and a drain regions are provided in each of the at least one graphene nano-ribbon. The channel region is located between the source region and the drain region. A gate dielectric is positioned on the at least one graphene nano-ribbon. A gate conductor on the gate dielectric. A source and drain contacts contact the source region and the drain region respectively on the side surface of the oxide protection layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.