Semiconductor devices and methods of manufacturing the semiconductor device
US9087704B2 · kind B2 · utility
2Cited by
1References
44Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 8, 2013 |
| Grant date | Jul 21, 2015 |
| Priority date | — |
| Expiry date | Apr 19, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
Abstract
According to example embodiments, a semiconductor device may include a high electron mobility transistor (HEMT) on a first region of a substrate, and a diode on a second region of the substrate. The HEMT may be electrically connected to the diode. The HEMT and the diode may be formed on an upper surface of the substrate such as to be spaced apart from each other in a horizontal direction. The HEMT may include a semiconductor layer. The diode may be formed on another portion of the substrate on which the semiconductor layer is not formed. The HEMT and the diode may be cascode-connected to each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.