Methods of forming bipolar devices and an integrated circuit product containing such bipolar devices

US9087706B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Jerome Ciavatti · Mechanicville, US
• Roderick Miller · Mechanicville, US
• Marc Tarabbia · Austin, US

Key dates

• Filing date: Dec 23, 2014
• Grant date: Jul 21, 2015
• Expiry date: Dec 23, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038

Abstract

One method disclosed herein includes performing at least one common process operation to form a plurality of first gate structures for each of a plurality of field effect transistors and a plurality of second gate structures above a region where a bipolar transistor will be formed and performing an ion implantation process and a heating process to form a continuous doped emitter region that extends under all of the second gate structures. A device disclosed herein includes a first plurality of field effect transistors with first gate structures, a bipolar transistor that has an emitter region and a plurality of second gate structures positioned above the emitter region, wherein the bipolar transistor comprises a continuous doped emitter region that extends laterally under all of the plurality of second gate structures.