Fabrication of lithographic image fields using a proximity stitch metrology
US9087740B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 9, 2013 |
| Grant date | Jul 21, 2015 |
| Priority date | — |
| Expiry date | Jan 15, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70475
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of determining stitching errors in multiple lithographically exposed fields on a semiconductor layer during a semiconductor manufacturing process is provided. The method may include receiving a predetermined design distance corresponding to a plurality of petals associated with the multiple lithographically exposed fields and identifying a blossom within a single field-of-view (FOV) of a metrology tool, where the blossom is formed by a non-overlapping abutment of corners corresponding to the multiple lithographically exposed fields. The blossom may include the plurality of petals associated with the multiple lithographically exposed fields. Petal position errors may then be calculated based on both a coordinate position for each of the plurality of petals within the blossom and the predetermined design distance, whereby the calculated petal position errors are indicative of stitching errors for the multiple lithographically exposed fields.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.