LDMOS device with short channel and associated fabrication method
US9087774B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 26, 2013 |
| Grant date | Jul 21, 2015 |
| Priority date | — |
| Expiry date | Sep 26, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/157
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating an LDMOS device includes: forming a gate of the LDMOS device on a semiconductor substrate; performing tilt body implantation by implanting dopants of a first conductivity type in the semiconductor substrate using a mask, wherein the tilt body implantation is implanted at an angle from a vertical direction; performing zero tilt body implantation by implanting dopants of the first conductivity type using the same mask, wherein the zero tilt body implantation is implanted with zero tilt from the vertical direction, and wherein the tilt body implantation and the zero tilt body implantation are configured to form a body region of the LDMOS device; and forming a source region and a drain contact region of the LDMOS device, wherein the source region and the drain contact region are of a second conductivity type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.