Joel M. McGregor
15Patents
5h-index
12Co-inventors
63Inventor score
Filing activity: Mar 13, 1997 → May 21, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5811315A | Method of forming and planarizing deep isolation trenches in a silicon-on-insulator (SOI) structure | Emerging Cross-Sectional Technologies | 47 | Expired |
| US6362064B1 | Elimination of walkout in high voltage trench isolated devices | Electricity | 24 | Expired |
| US10090409B2 | Method for fabricating LDMOS with self-aligned body | Electricity | 10 | Active |
| US8987818B1 | Integrated MOS power transistor with thin gate oxide and low gate charge | Electricity | 6 | Active |
| US8946851B1 | Integrated MOS power transistor with thin gate oxide and low gate charge | Electricity | 5 | Active |
| US9502251B1 | Method for fabricating low-cost isolated resurf LDMOS and associated BCD manufacturing process | Electricity | 5 | Active |
| US9941171B1 | Method for fabricating LDMOS with reduced source region | Electricity | 3 | Active |
| US10665712B2 | LDMOS device with a field plate contact metal layer with a sub-maximum size | Electricity | 2 | Active |
| US9450052B1 | EEPROM memory cell with a coupler region and method of making the same | Electricity | 2 | Active |
| US9087774B2 | LDMOS device with short channel and associated fabrication method | Electricity | 2 | Active |
| US9041102B2 | Power transistor and associated method for manufacturing | Electricity | 1 | Active |
| US9893170B1 | Manufacturing method of selectively etched DMOS body pickup | Electricity | 1 | Active |
| US9893146B1 | Lateral DMOS and the method for forming thereof | Electricity | 1 | Active |
| US11069777B1 | Manufacturing method of self-aligned DMOS body pickup | Electricity | 0 | Active |
| US11508806B1 | Low leakage ESD MOSFET | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.