Self aligned embedded gate carbon transistors

US9087811B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Dechao Guo · Niskayuna, US
• Shu-Jen Han · Somers, US
• Yu Lu · Ridgefield, US
• Keith Kwong Hon Wong · Wappingers Falls, US

Key dates

• Filing date: Aug 16, 2013
• Grant date: Jul 21, 2015
• Expiry date: Oct 11, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K85/221
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Transistors with self-aligned source/drain regions a gate structure embedded in a substrate; self-aligned source and drain contacts embedded in the substrate around the gate structure; and a channel layer over the gate structure and self-aligned source and drain contacts. The source and drain contacts extend above the channel layer.