Semiconductor device including fuse structure
US9087842B2 · kind B2 · utility
6Cited by
8References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 13, 2014 |
| Grant date | Jul 21, 2015 |
| Priority date | — |
| Expiry date | Jun 13, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate having a fuse area and a device area; a fuse structure in an insulating layer of the fuse area, and a wire structure in the insulating layer of the device area. The fuse structure includes a fuse via, a fuse line electrically connected to a top end of the fuse via pattern and extending in a direction. The wire structure includes a wire via, a wire line electrically connected to a top end of the wire via and extending in the first direction. A width in the first direction of the fuse via is smaller than a width in the first direction of the wire via.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.