Method for forming an insulating trench in a semiconductor substrate and structure, especially CMOS image sensor, obtained by said method
US9087872B2 · kind B2 · utility
1Cited by
2References
8Claims
0Family size
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Key dates
| Filing date | Jan 30, 2014 |
| Grant date | Jul 21, 2015 |
| Priority date | — |
| Expiry date | Jan 30, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A structure comprising at least one DTI-type insulating trench in a substrate, the trench being at the periphery of at least one active area of the substrate forming a pixel, the insulating trench including a cavity filled with a dielectric material, the internal walls of the cavity being covered with a layer made of a boron-doped material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.