Device with through-silicon via (TSV) and method of forming the same
US9087878B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 6, 2013 |
| Grant date | Jul 21, 2015 |
| Priority date | — |
| Expiry date | Dec 5, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2225/06572
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes forming an opening extending from a top surface of a silicon substrate into the silicon substrate to a predetermined depth. The method further includes forming an insulation structure on the silicon substrate along the sidewalls and the bottom of the opening and forming a conductive layer on the insulation structure to fill the opening. A first interface between the insulation structure and the silicon substrate has an interface roughness with a peak-to-valley height less than 5 nm, and a second interface between the insulation structure and the conductive layer has an interface roughness with a peak-to-valley height less than 5 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.