Semiconductor devices having vertical device and non-vertical device and methods of forming the same
US9087922B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 6, 2012 |
| Grant date | Jul 21, 2015 |
| Priority date | — |
| Expiry date | Nov 3, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/85
Abstract
In a semiconductor device, a vertical transistor comprises: a first diffusion region on a substrate; a channel region on the first diffusion region and extending in a vertical direction; a second diffusion region on the channel region; and a gate electrode at a sidewall of, and insulated from, the channel region. A horizontal transistor is positioned on the substrate, the horizontal transistor comprising: a first diffusion region and a second diffusion region on the substrate and spaced apart from each other; a channel region on the substrate between the first diffusion region and the second diffusion region; and a gate electrode on the channel region and isolated from the channel region. A portion of a gate electrode of the vertical transistor and a portion of the gate electrode of the horizontal transistor are at a same vertical position in the vertical direction relative to the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.