Inventor · Yongin-si, KR

Min-Chul Sun

36Patents
8h-index
42Co-inventors
75Inventor score

Filing activity: Oct 30, 2002 → Oct 20, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US7679083B2 Semiconductor integrated test structures for electron beam inspection of semiconductor wafers Electricity 97 Active
US7772866B2 Structure and method of mapping signal intensity to surface voltage for integrated circuit inspection Electricity 85 Active
US9087922B2 Semiconductor devices having vertical device and non-vertical device and methods of forming the same Electricity 20 Active
US7084061B2 Methods of fabricating a semiconductor device having MOS transistor with strained channel Electricity 18 Expired
US9570600B2 Semiconductor structure and recess formation etch technique Electricity 14 Active
US9219119B2 Semiconductor device with nanowires in different regions at different heights and fabricating method thereof Emerging Cross-Sectional Technologies 10 Active
US7781322B2 Nickel alloy salicide transistor structure and method for manufacturing same Electricity 8 Expired
US9583583B2 Semiconductor device with nanowires in different regions at different heights Emerging Cross-Sectional Technologies 8 Active
US6797559B2 Method of fabricating semiconductor device having metal conducting layer Electricity 5 Expired
US7232756B2 Nickel salicide process with reduced dopant deactivation Electricity 5 Expired
US10014219B2 Semiconductor device Emerging Cross-Sectional Technologies 3 Active
US10615080B2 Methods of manufacturing semiconductor devices by etching active fins using etching masks Electricity 2 Active
US7307320B2 Differential mechanical stress-producing regions for integrated circuit field effect transistors Electricity 2 Expired
US10529801B2 Semiconductor device including isolation regions Electricity 2 Active
US9461054B2 Semiconductor devices having vertical device and non-vertical device and methods of forming the same Electricity 1 Active
US10256352B2 Structures for nitride vertical transistors Electricity 1 Active
US8557691B2 Method of fabricating semiconductor device having buried wiring and related device Electricity 1 Active
US7501651B2 Test structure of semiconductor device Electricity 1 Active
US8928080B2 Field-effect transistor having back gate and method of fabricating the same Electricity 1 Active
US10964782B2 Semiconductor device including isolation regions Electricity 1 Active
US7005367B2 Method of fabricating a semiconductor device having a silicon oxide layer, a method of fabricating a semiconductor device having dual spacers, a method of forming a silicon oxide layer on a substrate, and a method of forming dual spacers on a conductive material layer Electricity 1 Expired
US7465617B2 Method of fabricating a semiconductor device having a silicon oxide layer, a method of fabricating a semiconductor device having dual spacers, a method of forming a silicon oxide layer on a substrate, and a method of forming dual spacers on a conductive material layer Electricity 1 Active
US7317204B2 Test structure of semiconductor device Electricity 1 Expired
US9343549B2 Semiconductor device and method for fabricating the same Electricity 0 Active
US10109532B2 Methods of manufacturing finFET semiconductor devices Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.